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零件编号(s) : AN1224
ST-Microelectronics
STMicroelectronics
产品描述 (功能) : Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application

Introduction
LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency, linearity, and biasing simpleness that lower the overall system cost and make them attractive for high volume businesses demanding low cost RF power transistor solutions. Thanks to these advantages, LDMOS RF power transistors are the proven mainstay in the power amplifier business of the cellular base station today. The device used for the present characterization, SD57045, an STMicroelectronics product, is a lateral current, double diffused MOS transistor that delivers 45 W under 28 V supply. It is unmatched from DC to 1 Ghz making it eligible for a variety of applications, especially for high performance, low cost FM driver applications. This application note documents the feasibility of a low cost 900 MHz cellular device as a commercial FM driver. The key advantages of LDMOS technology are improved thermal resistance and reduced source output inductance. The wire-bonded connections to the external circuitry (DMOS config.) are no longer required because the source at the chip surface is connected to the substrate by the diffusion of a highly doped p-type region. Consequently, LDMOS has excellent high frequency response because of its high fT and superior gain due to the low feedback capacitance and reduced source inductance. An additional advantage of the LDMOS structure is that beryllium oxide (BeO), a toxic electrical insulator required to isolate the drain with DMOS transistors, is no longer needed. Hence, not only the thermal resistance is improved, but package cost and environmental impact are significantly reduced. Finally, in an LDMOS, the parasitic bipolar has been nullified guaranteeing good ruggedness, efficiency and high current handling capability.

产品描述 (功能) : High power RF LDMOS Field Effect transistor 350 W, 28 V, 2300 – 2400 MHz

Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeeds advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features
• Asymmetric design
   - Main: 150 W P1dB
   - Peak: 200 W P1dB
Broadband internal matching
• CW performance at 2350 MHz, 28 V
   - Ouput power = 250 W P1dB
   - Efficiency = 46%
   - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
   JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant

产品描述 (功能) : High power RF LDMOS Field Effect transistor 350 W, 28 V, 2300 – 2400 MHz

Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineons advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features
• Asymmetric design
   - Main: 150 W P1dB
   - Peak: 200 W P1dB
Broadband internal matching
• CW performance at 2350 MHz, 28 V
   - Ouput power = 250 W P1dB
   - Efficiency = 46%
   - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
   JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant

零件编号(s) : BLF878 BLF878
NXP
NXP Semiconductors.
产品描述 (功能) : UHF power LDMOS transistor

General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W Broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital transmitter applications.

Features
■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:
    ◆ Peak envelope power load power = 300 W
    ◆ power gain = 21 dB
    ◆ Drain efficiency = 46 %
    ◆ Third order intermodulation distortion = −35 dBc
■ DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A:
    ◆ Average output power = 75 W
    ◆ power gain = 21 dB
    ◆ Drain efficiency = 32 %
    ◆ Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)
■ Integrated ESD protection
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Designed for Broadband operation (470 MHz to 860 MHz)
■ Excellent reliability
■ Internal input and output matching for high gain and optimum Broadband operation
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band

零件编号(s) : BLF872
NXP
NXP Semiconductors.
产品描述 (功能) : UHF power LDMOS transistor

General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W Broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital transmitter applications.

Features
■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
   ◆ Peak envelope power load power PL(PEP) = 300 W
   ◆ Gain Gp = 15 dB
   ◆ Drain efficiency ηD = 43 %
   ◆ Third order intermodulation distortion IMD3 = −28 dBc
■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
   ◆ Average output power PL(AV) = 70 W
   ◆ Gain Gp = 15 dB
   ◆ Drain efficiency ηD = 30 %
   ◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency)
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ Designed for Broadband operation (UHF band)
■ Excellent reliability
■ Internal input and output matching for high gain and optimum Broadband operation
■ Source on underside eliminates DC isolators, reducing common-mode inductance
■ Easy power control

Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band

零件编号(s) : BFR843EL3
Infineon
Infineon Technologies
产品描述 (功能) : Robust Low Noise Broadband Pre-Matched Bipolar RF transistor

Product Brief
The BFR843EL3 is a low noise Broadband NPN bipolar RF transistor. Its integrated feedback provides a Broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in a very small thin leadless plastic package, ideal for modules.

Features
• Low noise Broadband NPN RF transistor based on
   Infineon´s reliable, high volume SiGe:C bipolar technology
• High maximum RF input power and ESD robustness
• Unique combination of high RF performance, robustness
   and ease of application circuit design
• Low noise figure: NFmin = 1 dB at 2.4 GHz
   and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA
• High gain |S21|2 = 22 dB at 2.4 GHz
   and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
• OIP3 = 22 dBm at 2.4 GHz and 5.5 GHz, 1.8 V, 25 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V
   and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding
   collector resistor)
• Low power consumption, ideal for mobile applications
• Pb-free (RoHS compliant) and halogen-free very small
   thin leadless plastic package

Applications
As Low Noise Amplifier (LNA) in
• Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, Broadband LTE or WiMAX LNA
• Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA)
Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
• ISM bands up to 10 GHz
• Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p

零件编号(s) : BLF642 BLF642-15
NXP
NXP Semiconductors.
产品描述 (功能) : Broadband power LDMOS transistor

General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital applications.

Features and benefits
CW performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 35 W
power gain = 19 dB
Drain efficiency = 63 %
2-tone performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
Average output power = 17.5 W
power gain = 19 dB
Drain efficiency = 48 %
Intermodulation distortion = 28 dBc
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

Applications
Communication transmitter applications inthe HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range

零件编号(s) : BLF645 BLF645-15
NXP
NXP Semiconductors.
产品描述 (功能) : Broadband power LDMOS transistor

General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital applications.

Features
■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
   ♦ Average output power = 100 W
   ♦ power gain = 18 dB
   ♦ Drain efficiency = 56 %
■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
   ♦ Peak envelope load power = 100 W
   ♦ power gain = 18 dB
   ♦ Drain efficiency = 45 %
   ♦ Intermodulation distortion = −32 dBc
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

Applications
■ Communication transmitter applications in the HF to 1400 MHz frequency range
■ Industrial applications in the HF to 1400 MHz frequency range

 

零件编号(s) : BLF642
Ampleon
Ampleon
产品描述 (功能) : Broadband power LDMOS transistor

General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital applications.

Features and benefits
■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
   drain current IDq = 0.2 A :
   ◆ Average output power = 35 W
   ◆ power gain = 19 dB
   ◆ Drain efficiency = 63 %
■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
   drain current IDq = 0.2 A :
   ◆ Average output power = 17.5 W
   ◆ power gain = 19 dB
   ◆ Drain efficiency = 48 %
   ◆ Intermodulation distortion = -28 dBc
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ Communication transmitter applications in the HF to 1400 MHz frequency range
■ Industrial applications in the HF to 1400 MHz frequency range

零件编号(s) : BLF645
Ampleon
Ampleon
产品描述 (功能) : Broadband power LDMOS transistor

General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and Broadband performance of this device makes it ideal for digital applications.

Features
■ CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
   drain current IDq = 0.9 A for total device:
   ◆ Average output power = 100 W
   ◆ power gain = 18 dB
   ◆ Drain efficiency = 56 %
■ 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
   drain current IDq = 0.9 A for total device:
   ◆ Peak envelope load power = 100 W
   ◆ power gain = 18 dB
   ◆ Drain efficiency = 45 %
   ◆ Intermodulation distortion = -32 dBc
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ Communication transmitter applications in the HF to 1400 MHz frequency range
■ Industrial applications in the HF to 1400 MHz frequency range

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