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零件编号(s) : HM6106A
HMSEMI
Shenzhen Huazhimei Semiconductor Co., Ltd
产品描述 (功能) : Multifunctional High Brightness Light Emitting Diode (LED) Driver IC

Overview:
+0$ is a current modulating circuit operating from 2.85V to 6V circuit, with constant output current up to 1.5A, can be used to drive including Various types of Light-Emitting Diodes, including white Light-Emitting Diodes. +0 $ The LED terminal current is set by an external resistor, the current range range from 30mA to 1.5A. Power transistors are integrated inside the chip, Greatly reduces the number of external components. The chip also integrates There are circuits such as status registers and oscillators, in the key input pins With the cooperation of the timing capacitor connection pin, +0 $ can be controlled LED in three of the four states of off, strong Light, weak Light and strobe cycle between one or four states, ideal for flashLight application. Other features include chip temperature modulation, chip enable input entry etc. +0 $ Available in a thermally enhanced 8-pin SOP8 package.

Features:
● Operating voltage range: 2.85V to 6V
● Working mode:
   Turn off, strong Light, weak Light, strobe four state cycle
   Turn off, strong Light, weak Light three state cycle
   Turn off, strong Light, flash three state cycle
● Power transistors are integrated inside the chip
● Low dropout: 0.4V@1.5A
● LED pin output current can reach 1.5A
● Output current accuracy: ± 5%
● Chip temperature modulation function
● Working ambient temperature range: -40℃ to 85℃
● Available in thermally enhanced 8-pin SOP8 package
● The product is lead-free, meets rohs, and is halogen-free

application:
● FlashLight
● High brightness Light Emitting Diode (LED) driver
Light-Emitting Diode (LED) headLights
● Emergency Lights and Lighting fixtures

零件编号(s) : TSSF4500 TSSF4500 TSSF4500
Vishay
Vishay Semiconductors
产品描述 (功能) : High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Description
TSSF4500 is a high speed infrared Emitting Diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package with spherical side view lens.
The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.

Features
● High modulation bandwidth (10 MHz)
● Extra high radiant power and high radiant intensity
● Low forward voltage
● Suitable for high pulse current operation
● Angle of half intensity ϕ = ± 22
● Peak wavelength p = 870 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
    TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).

零件编号(s) : TSFF5200 TSFF5200
Vishay
Vishay Semiconductors
产品描述 (功能) : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description
TSFF5200 is a high speed infrared Emitting Diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.

Features
● High modulation bandwidth (35 MHz)
● Extra high radiant power and radiant intensity
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Angle of half intensity ϕ = ± 10°
● Peak wavelength λp = 870 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    IInfrared video data transmission between Camcorder and TV set.
    Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

零件编号(s) : TSHF5200
Vishay
Vishay Semiconductors
产品描述 (功能) : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description
TSHF5200 is a high speed infrared Light Emitting Diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package.
The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.
The TSHF5200 emitter is suitable for serial infrared links according to the IrDA-standard.

Features
• High modulation bandwidth (10 MHz)
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
    Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
    TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz).

零件编号(s) : LN189L
Panasonic
Panasonic Corporation
产品描述 (功能) : GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode

Light source for distance measuring systems

Features
● High-power output, high-efficiency : PO = 5.5 mW (typ.)
● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.)
● Infrared Light emission close to monochromatic Light : λP = 880 nm(typ.)
● Narrow directivity using spherical lenses; works well with optical
   systems in auto focus systems
● Mini hollow mold resin package

零件编号(s) : LN184
Panasonic
Panasonic Corporation
产品描述 (功能) : GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode

Light source for distance measuring systems

Features
● High-power output, high-efficiency : PO = 5 mW (typ.)
● Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)
● Infrared Light emission close to monochromatics Light : λP = 880 nm
   (typ.)
● Narrow directivity using spherical lenses; works well with optical
   systems in auto focus systems

零件编号(s) : LN145W
Panasonic
Panasonic Corporation
产品描述 (功能) : GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode

Light source for optical fiber communications,

Features
● Red Light emission close to monochromatic Light : λP = 700 nm
● High-power output, high-efficiency
● High coupling characteristics and suits to a plastic fiber
● High-speed response : –3dB modulation of 10MHz
● Side-view flat resin package

零件编号(s) : LN189M
Panasonic
Panasonic Corporation
产品描述 (功能) : GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode

Light source for distance measuring systems

■ Features
• High-power output, high-efficiency: PO = 5.5 mW (typ.)
• Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)
• Infrared Light emission close to monochromatic Light: λP = 880 nm (typ.)
• Narrow directivity using spherical lenses; works well with optical
   systems in auto focus systems

零件编号(s) : LN189S
Panasonic
Panasonic Corporation
产品描述 (功能) : GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode

Light source for distance measuring systems

Features
● High-power output, high-efficiency : PO = 5.5 mW (typ.)
● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.)
● Infrared Light emission close to monochromatic Light : λP = 880 nm(typ.)
● Narrow direcivity using spherical lenses; works well with optical
   systems in auto focus systems
● Mini hollow mold resin package

产品描述 (功能) : PLCC-2 Pkg Infrared Light Emitting Diode

Description:
The OP180 is a GaAs and the OP280K, OP280KT is a GaAIAs infrared LED mounted in plastic leadless PLCC-2 SMD package with a flat lens window that allows a wide beam angle. The major differentiator from the two High power GaAlAs LEDs is that OP280KT has reversed polarity terminals. The OP280V is incorporated into the group with a high performance 850nm invisible VCSEL (Class 1M) with silicon encapsulant. Its high speed, high output and narrow beam pattern (18°) makes it very suitable for high-speed data equipment applications. The OP280PS has a GaAlAs Diode in a PLCC-2 package that features a narrow irradiance pattern. The PLCC-2 packaging is suitable for single device or array applications.
The 180 and 280 Series LEDs are mechanically and spectrally matched to OP580 series phototransistors.

Features:
• High power GaAs—OP180, 940 nm center wavelength
• High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength
• VCSEL GaAlAs-OP280V, 850 nm center wavelength
• Point Source GaAlAs-OP280PS, 850 nm center wavelength
• PLCC-2 package style with silicon encapsulation
• Half Power Beam angle from 18° to 100°
• Suitable for single device or array applications

Applications:
• Non-contact position sensing
• Datum detection
• Machine automation
• Optical encoding

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