2SC5337 数据手册 ( 数据表 ) - California Eastern Laboratories.
生产厂家
![CEL](/logo/CEL.png)
California Eastern Laboratories.
![CEL](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.