2SD525 数据手册 ( 数据表 ) - Shenzhen SPTECH Microelectronics Co., Ltd.
生产厂家
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Shenzhen SPTECH Microelectronics Co., Ltd.
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DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A
• Complement to Type 2SB595
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 30W high fidelity audio frequency amplifier output stage applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor