2SD526 数据手册 ( 数据表 ) - Shenzhen SPTECH Microelectronics Co., Ltd.
生产厂家
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Shenzhen SPTECH Microelectronics Co., Ltd.
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DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
• Good Linearity of hFE
• Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃
• Complement to Type 2SB596
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 20~25W high fidelity audio frequency amplifier output stage applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor