2SJ201 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High-Power Amplifier Application
High breakdown voltage : VDSS= −200 V
High forward transfer admittance : |Yfs| = 5.0 S (typ.)
Complementary to 2SK1530
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor ( Rev : 2007 )
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
