2SJ360 数据手册 ( 数据表 ) - Toshiba
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High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive Applications
● 4-V gate drive
● Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.)
● High forward transfer admittance : |Yfs| = 0.9 S (typ.)
● Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
● Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2009 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba