2SJ387S 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Description
High speed power switching
FEATUREs
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC-DC converter
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Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics