零件编号
2SJ412
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Toshiba
2SJ412 数据手册 ( 数据表 ) - Toshiba
Toshiba
DC-DC Converter, Relay Drive and Motor Drive Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS= −100 μA (max) (VDS= −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS= −10 V, ID= −1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 2002 )
Toshiba
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