2SJ465(1998) 数据手册 ( 数据表 ) - Toshiba
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HIGH PSEED, HIGH CURRENT SWITCHING APPLICAITONS
DC−DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS
• 2.5V Gate Drive
• Low Drain−Source ON Resistance : RDS (ON) = 0.54 Ω (Typ.)
• High Forward Transfer Admittance : |Yfs| = 1.7 S (Typ.)
• Low Leakage Current : IDSS = −100 μA (Max.) (VDS = −16 V)
• Enhancement Mode : Vth = −0.5~−1.1 V (VDS = −10 V, ID = −200 μA)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2009 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2006 )
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