2SK3348 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
生产厂家
![Hitachi](/logo/Hitachi.png)
Hitachi -> Renesas Electronics
![Hitachi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Features
• Low on-resistance
RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA)
RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)
• 2.5 V gate drive device.
• Small package (CMPAK)
Page Link's:
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Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics