BD825 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家
![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD826
• Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and television circuits.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor