BD828 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
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DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD827
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and
television circuits.
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