datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  NXP Semiconductors.  >>> BF998WR PDF

BF998WR 数据手册 ( 数据表 ) - NXP Semiconductors.

BF998WR image

零件编号
BF998WR

产品描述 (功能)

Other PDF
  no available.

PDF
DOWNLOAD     

page
13 Pages

File Size
253.5 kB

生产厂家
NXP
NXP Semiconductors. NXP

DESCRIPTION
Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS
• VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 
 

零件编号
产品描述 (功能)
PDF
生产厂家
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
Philips Electronics
N-channel dual-gate MOS-FET
NXP Semiconductors.
N-channel dual-gate MOS-FET
Philips Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]