BS828 数据手册 ( 数据表 ) - General Semiconductor
生产厂家
![General](/logo/General.png)
General Semiconductor
![General](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
FEATURES
♦ High breakdown voltage
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
♦ Specially suited for telephone subsets
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor