CP211 数据手册 ( 数据表 ) - Central Semiconductor
生产厂家
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 80 x 99 MILS
Die Thickness 12.5 MILS
Base Bonding Pad Area 12 x 32 MILS
Emitter Bonding Pad Area 13 x 48 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Cr/Ni/Ag - 16,000Å
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip ( Rev : 2004 )
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor Corp
Power Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2003 )
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
