CP214 数据手册 ( 数据表 ) - Central Semiconductor
生产厂家
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 16 x 16 MILS
Die Thickness 7.5 MILS
Base Bonding Pad Area 2.9 x 3.4 MILS
Emitter Bonding Pad Area 2.9 x 3.4 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 16,000Å
Small Signal Transistor NPN - Silicon RF Transistor Chip
Central Semiconductor Corp
Small Signal Transistor NPN - RF Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - RF Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - RF Transistor Chip
Central Semiconductor Corp
Small Signal Transistor NPN - RF Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - RF Transistor Chip
Central Semiconductor
Small Signal Transistors NPN - RF Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Silicon RF Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Silicon RF Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Silicon RF Transistor Chip
Central Semiconductor
