IPD25CN10N 数据手册 ( 数据表 ) - Inchange Semiconductor
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![Iscsemi](/logo/Iscsemi.png)
Inchange Semiconductor
![Iscsemi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
• DESCRITION
• Ideal for high-frequency switching and synchronous rectification
• FEATURES
• Static drain-source on-resistance:
RDS(on)≤25mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor