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IRL2203S 数据手册 ( 数据表 ) - International Rectifier

IRL2203S image

零件编号
IRL2203S

产品描述 (功能)

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9 Pages

File Size
161.1 kB

生产厂家
IR
International Rectifier IR

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Logic-Level Gate Drive
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

 

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零件编号
产品描述 (功能)
PDF
生产厂家
POWER MOS7® MOSFET
Advanced Power Technology
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
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International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
New Jersey Semiconductor
HEXFET® Power MOSFET
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET ( Rev : 2000 )
Kersemi Electronic Co., Ltd.

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