J349 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
4-V gate drive
Low drain−source ON resistance : RDS (ON)= 33 mΩ(typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS= −100 μA (max) (VDS= −60 V)
Enhancement mode : Vth= −0.8~−2.0 V (VDS= −10 V, ID= −1 mA)
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor ( Rev : 2007 )
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
