零件编号
KU3600N10W
Other PDF
no available.
PDF
page
6 Pages
File Size
599.4 kB
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES
• VDSS(Min.)= 100V, ID= 1.7A
• Drain-Source ON Resistance : RDS(ON)=0.36 Ω (max) @VGS =10V
• Qg(typ.) =4.2nC