Features
◆ For general purpose applications
◆ Metal-on-silicon Schottky barrier device which is protected by a
   PN junction guard ring.
◆ The low forward voltage drop and fast switching make it ideal
   for protection of MOS devices, steering, biasing and coupling
   diodes for fast switching and low logic level applications.
◆ This diode is also available in the DO-35 case with type
   designation 1N5711 and 1N6263.