MD1803DFH 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家
![ST-Microelectronics](/logo/ST-Microelectronics.png)
STMicroelectronics
![ST-Microelectronics](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
The MD1803DFH is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
FEATUREs
■ State-of-the-art technology:
– Diffused collector “enhanced generation”
■ More stable performance versus operating
temperature variation
■ Low base drive requirement
■ Tighter hFE range at operating collector current
■ Fully insulated power package U.L. compliant
■ Creepage distance path > 4mm
■ Integrated free wheeling diode
■ In compliance with the 2002/93/EC european directive
APPLICATIONs
■ Horizontal deflection output for TV0
High voltage NPN Power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN Power transistor for standard Definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display ( Rev : 2007_03 )
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN Power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics