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MPS3826 数据手册 ( 数据表 ) - New Jersey Semiconductor

MPS3826 image

零件编号
MPS3826

产品描述 (功能)

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NJSEMI
New Jersey Semiconductor NJSEMI

NPN SILICON ANNULAR TRANSISTORS

. . . designed for use in general-purpose amplifier applications.

• Collector Emitter Breakdown Voltage -
   BVCEO = 45 Vdc (Min) @ Ic = 10 mAdc
• High Current-Gain—Bandwidth Product -
   fT = 500 MHz (Typ) @ Ic = 10 mAdc
• Low Output Capacitance —
   Cob = 2.2pF (Typ) @ VCB= 10 Vdc

 

零件编号
产品描述 (功能)
PDF
生产厂家
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