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MPSU07 数据手册 ( 数据表 ) - New Jersey Semiconductor

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零件编号
MPSU07

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NJSEMI
New Jersey Semiconductor NJSEMI

NPN SILICON ANNULAR AMPLIFIER TRANSISTOR

. . . designed for general-purpose, high-voltage amplifier and driver applications.

• High Collector-Emitter Breakdown Voltage —
   BVCEO = 100 Adc (Min) @ IC = 1.0 mAdc
• High Power Dissipation - PD = 10W @ TC = 25°C
• Complement to PNP MPS-U57

 

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生产厂家
NPN SILICON ANNULAR AMPLIFIER TRANSISTORS
New Jersey Semiconductor
NPN Silicon Annular Transistor
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
PNP SILICON ANNULAR AMPLIFIER TRANSISTORS
Motorola => Freescale
PNP silicon annular amplifier transistors
New Jersey Semiconductor
NPN Silicon Annular Transistors
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor

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