NTE2686 数据手册 ( 数据表 ) - ETC
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[NTE-Electronic]
FEATUREs:
● Collector−Emitter Breakdown Voltage: V(BR)CEO = 150V Min
● High DC Current Gain: hFE = 5000 Min @ IC = 6A, VCE = 4V
● Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V Max @ IC = 6A, IB = 6mA
APPLICATIONs:
● Audio
● Series Regulator
● General Purpose
Silicon Complementary Darlington Transistors Audio Power Output TO3PL Type Package
Unspecified
Silicon Complementary Transistors Audio Power Output
NTE Electronics
Silicon Complementary Transistors Audio Power Output
NTE Electronics
Silicon Complementary Transistors High Power Audio Output
NTE Electronics
Silicon Complementary Transistors Audio Amplifier Output
NTE Electronics
Silicon Complementary Transistors Audio Output Driver
NTE Electronics
Darlington Complementary Silicon Power Transistors ( Rev : 2016 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors ( Rev : 2007 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors
ON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
New Jersey Semiconductor