Description:
The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.

FEATUREs:
● Single +5V Operation (±10%)
● Maximum Access Time: 150ns
● Low Power Dissipation: 302.5mW Max (Active) 22mW Max (Standby)
● Three State Data Output
● Early–Write Common I/O Capability
● 128 Cycle, 2ms Refresh
● Control on Pin1 for Automatic or Self Refresh
● RAS–Only Refresh Mode
● CAS Controlled Output
● Fast Page Mode Cycle Time
● Low Soft Error Rate: < 0.1% per 1000 Hrs