Description
The OP268FPS contains an 850 nm gallium aluminum arsenide infrared emitting diode molded in an “end-looking”miniature black package.
This device has a wide radiation angle due to its flat emitting surface. The point source GaAIAs IRED emits photons from a 0.004”diameter area centered with the optical centerline. Small size and 0.100” (2.54 mm) lead spacing allow considerable design flexibility.
The stable VF vs. Temperature characteristic make them ideal for applications where voltage is limited (such as battery operation).
The low tr/tf make them ideal for high speed operation.

FEATUREs
• Point source irradiance pattern
• Flat lensed for wide radiation angle
• Easily stackable on 0.100”(2.54 mm) hole centers