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PBSS5140T 数据手册 ( 数据表 ) - NXP Semiconductors.

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零件编号
PBSS5140T

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page
13 Pages

File Size
80.7 kB

生产厂家
NXP
NXP Semiconductors. NXP

General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation

Applications
■ General-purpose switching and muting
■ LCD backlighting
■ Supply line switching circuits
■ Battery-driven equipment (mobile phones, video cameras and handheld devices)

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零件编号
产品描述 (功能)
PDF
生产厂家
40 V, 1 A PNP low VCEsat BISS transistor
Nexperia B.V. All rights reserved
40 V PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 0.5 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V PNP low VCEsat (BISS) transistor
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40 V PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 4 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 0.5 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 5 A PNP low VCEsat (BISS) transistor
Philips Electronics
40 V, 4 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 2 A PNP low VCEsat (BISS) transistor
Philips Electronics

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