RJK5002DJE 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
● Low on-state resistance
RDS(on) = 3.83 Ω typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25°C)
● High speed switching
500V - 12A - MOS FET / High Speed Power Switching
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500V - 35A - MOS FET High Speed Power Switching
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500V - 6A - MOS FET High Speed Power Switching
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500V - 30A - MOS FET High Speed Power Switching
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500V - 19A - MOS FET High Speed Power Switching
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500V - 14A - MOS FET / High Speed Power Switching
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High-Speed Switching Use Pch Power MOS FET
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High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
