RJK5014DPP-E0-T2 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
Low on-resistance
RDS(on)= 0.325Ω typ. (at ID= 9.5 A, VGS= 10 V, Ta = 25°C)
Low leakage current
High speed switching
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500V - 12A - MOS FET / High Speed Power Switching
Renesas Electronics
500V - 35A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 2.4A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 6A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 30A - MOS FET High Speed Power Switching
Renesas Electronics
500V - 14A - MOS FET / High Speed Power Switching
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
