RJK6012DPE 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0.77 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
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Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
