RJK6013DPE 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0.58 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Page Link's:
1
2
3
4
5
6
7
600V - 11A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 5A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 1A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.4A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.8A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 21A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 10A - MOS FET High Speed Power Switching
Renesas Electronics
