RJK6024DPE 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
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600V - 0.4A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 5A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 1A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 11A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 11A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.8A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 21A - MOS FET High Speed Power Switching
Renesas Electronics
