SSM3J118TU(2007) 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance: Ron = 480 mΩ (max) (@VGS = −4 V)
Ron = 240 mΩ (max) (@VGS = −10 V)
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
P channel MOS type field effect transistor ( Rev : V2 )
SANYO -> Panasonic
