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STP19N06LFI 数据手册 ( 数据表 ) - STMicroelectronics

STP19N06L image

零件编号
STP19N06LFI

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N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.085 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175 °C OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

 

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生产厂家
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STMicroelectronics

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