TK380A60Y 数据手册 ( 数据表 ) - Toshiba
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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36mA)
APPLICATIONs
• Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS (DTMOSV)
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MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
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MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
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MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
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