General Description
This  low  threshold,  enhancement-mode  (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven,  silicon-gate  manufacturing  process.  This combination  produces  a  device  with  the  power  handling capabilities  of  bipolar  transistors  and  the  high  input impedance  and  positive  temperature  coefficient  inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
► Low threshold (1.6V max.)
► High input impedance
► Low input capacitance (110pF typical)
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N- and P-channel devices

APPLICATIONs
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches