TPC8126 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
Lithium Ion Battery Applications Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON)= 7.5 mΩ(typ.)
• Low leakage current: IDSS= −10 μA (max) (VDS= −30 V)
• Enhancement mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −0.5mA)
Page Link's:
1
2
3
4
5
6
7
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor ( Rev : 2007 )
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Field Effect Transistor Silicon P Channel MOS Type
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
Silicon P-Channel MOS Type Field-Effect Transistor
Toshiba
Silicon P Channel MOS Type Field Effect Transistor
Toshiba
P-channel MOS type silicon field effect transistor
SANYO -> Panasonic
P-Channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
