DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment.

FEATURES
• Ultra wide band : 2 to 8 GHz
• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz
• Medium Power : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz