2401(   数据手册 ( 数据表 )

Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Shunye Enterprise

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Diodes Incorporated.

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

Analog Devices

1.2 A, 20 V, 700 kHz/1.4 MHz, Nonsynchronous Step-Down Regulator

Xicor -> Intersil

Electrically Erasable PROM

Shenzhen Luguang Electronic Technology Co., Ltd

Surface Mount Schottky Barrier Rectifiers

VBsemi Electronics Co.,Ltd

N-Channel 200 V (D-S) 175 °C MOSFET

KEXIN Industrial

NPN Silicon Epitaxia

Diodes Incorporated.

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER