FB11N50A   数据手册 ( 数据表 )

International Rectifier

HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A

Vishay Semiconductors

Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)

Unspecified

10 Amp. Glass Passivated Bridge Rectifier

Vishay Semiconductors

Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)

International Rectifier

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A

International Rectifier

HEXFET® Power MOSFET

Vishay Semiconductors

Power MOSFET, 190 A

Vishay Semiconductors

Power MOSFET, 190 A

NEC => Renesas Technology

COMPOUND TRANSISTOR

eupec GmbH

IGBT-Modules

Infineon Technologies

EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC