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TYPICAL CHARACTERISTICS 2
Gain, ACP vs VD
25
VG=-2.5V
f=1453MHz
PO=30.5dBm
0
Gain
-10
20
-20
-30
15
ACP(+50kHz)
-40
ACP(-50kHz)
-50
ACP(-100kHz)
-60
10
ACP(+100kHz)
-70
3.0
3.2
3.4
3.6
3.8
4.0
VD(V)
EQUIVALENT CIRCUIT
1ST GATE
2ND GATE
1ST DRAIN
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01220A
GaAs FET HYBRID IC
800
VG=-2.5V
f=1453MHz
PO=30.5dBm
IDt vs VD
700
600
500
3.0
3.2
3.4
3.6 3.8
4.0
VD(V)
2ND DRAIN
RF INPUT
MATCHING
CIRCUIT
MATCHING
CIRCUIT
MATCHING
CIRCUIT
RF OUTPUT
GND
Nov. ´97