TPP25011(1998) 查看數據表（PDF） - STMicroelectronics
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TPP25011 Datasheet PDF : 7 Pages
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ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
IRM
VBR
VBO
IH
IBO
IPP
VGN
IG
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Gate voltage
Gate triggering current
Capacitance
1 - OPERATION WITHOUT GATE
Type
IRM @ VRM
max.
VBR @ IR
min.
µA
TPP25011 6
V
V
mA
60
250
1
TPP25011
VBO @ IBO
max.
min.
note1
max.
V
mA
mA
340
15
200
IH
min.
note 2
mA
180
C
max.
note 3
pF
100
2 - OPERATION WITH GATE
Type
TPP25011
VGN @ IGN = 30 mA
min.
max.
note 4
V
V
1.05
1.35
Note 1:
Note 2:
Note 3:
See the reference test circuit 1.
See test circuit 2.
VR = 5V, F = 1MHz
min.
mA
5
IG
VA-C = 100 V
max.
mA
40
3/7
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