MBM29PL3200BE 查看數據表（PDF） - Fujitsu

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MBM29PL3200BE

PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT

Fujitsu 

MBM29PL3200TE/BE70/90

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Fast Programming Function by Extended command

• Temporary sector unprotection

Temporary sector unprotection with the software command

• In accordance with CFI (Common Flash Memory Interface)

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