MBM29PL3200BE 查看數據表（PDF） - Fujitsu

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MBM29PL3200BE

PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT

Fujitsu 

MBM29PL3200TE/BE70/90

s DEVICE BUS OPERATION

Table 2 MBM29PL3200TE/BE User Bus Operations (DW/W = VIH)

Operation

CE OE WE A0 A1 A2 A3 A6 A9 DQ31 to DQ0 WP

Auto-Select Manufacturer Code *1

L L H L L L L L VID

Code

X

Auto-Select Device Code *1

L L H H L L L L VID

Code

X

Extended Auto-Select Device Code *1 L L H H H H H L VID

Code

X

Read *3

L L H A0 A1 A2 A3 A6 A9

DOUT

X

Standby

H X X X X X X X X HIGH-Z

X

Output Disable

L H H X X X X X X HIGH-Z

X

Write (Program/Erase)

L H L A0 A1 A2 A3 A6 A9

DIN

X

Enable Sector Protection *2, *4

L VID

L H L L L VID

X

X

Verify Sector Protection *2, *4

L L H L H L L L VID

Code

X

Boot Block Sector Write Protection *5 X X X X X X X X X

X

L

Legend : L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See DC Characteristics for voltage levels.

*1: Manufacturer and device codes may also be accessed via a command register write sequence. See Table 4.

*2: Refer to section on Sector Protection.

*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4: VCC = 3.3 V ± 10%

*5: Protect “outermost” 16 K words (8 K double words) of the boot block sectors.

Table 3 MBM29PL3200TE/BE User Bus Operations (DW/W = VIL)

Operation

CE OE WE DQ31/A-1 A0 A1 A2 A3 A6 A9 DQ15 to DQ0 WP

Auto-Select Manufacturer Code *1

LL H

L

L L L L L VID Code

X

Auto-Select Device Code *1

LL H

L

H L L L L VID Code

X

Extended Auto-Select Device Code *1 L L H

L

H H H H L VID Code

X

Read *3

LL H

A-1

A0 A1 A2 A3 A6 A9

DOUT

X

Standby

HX X

X

X X X X X X HIGH-Z X

Output Disable

LH H

X

X X X X X X HIGH-Z X

Write (Program/Erase)

LH L

A-1

A0 A1 A2 A3 A6 A9

DIN

X

Enable Sector Protection *2, *4

L VID

L

L H L L L VID

X

X

Verify Sector Protection *2, *4

LL H

L

L H L L L VID Code

X

Boot Block Sector Write Protection *5 X X X

X

XXXXXX

X

L

Legend : L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See DC Characteristics for voltage levels.

*1: Manufacturer and device codes may also be accessed via a command register write sequence. See Table 4.

*2: Refer to section on Sector Protection.

*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4: VCC = 3.3 V ± 10%

*5: Protect “outermost” 16 K words (8 K double words) of the boot block sectors.

8

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