TGA9083-EEU 查看數據表（PDF） - TriQuint Semiconductor
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TGA9083-EEU Datasheet PDF : 9 Pages
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RECOMMENDED
ASSEMBLY DIAGRAM
VG
.01uF
100pF
100pF
TGA9083-EEU
Vd
100pF
RF Input
RF Output
100 pF
100 pF
100 pF
.01uF
VG
Vd
Bond using three (four at RFOUT) 1.0-mil diameter, 25 to 30-mil length gold bond wires at RF Input and RF Output for optimum
performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in
drawing. Close placement of exter nal components is essential to stability.
Gate bias ( VG ) voltage can be applied from either side of MMIC.
Drain bias ( VD) voltage should be connected to both sides of MMIC.
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TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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