GP200MHS12 查看數據表（PDF） - Dynex Semiconductor

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GP200MHS12

Half Bridge IGBT Module

Dynex Semiconductor 

GP200MHS12

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

t

Turn-off delay time

d(off)

tf

Fall time

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

t

Rise time

r

EON

Turn-on energy loss

Qrr

Diode reverse recovery charge

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

t

Turn-off delay time

d(off)

tf

Fall time

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

EON

Turn-on energy loss

Q

Diode reverse recovery charge

rr

Test Conditions

IC = 200A

VGE = ±15V

V = 600V

CE

RG(ON) = RG(OFF) = 4.7Ω

L ~ 100nH

IF = 200A, VR = 50% VCES,

dIF/dt = 2500A/µs

Min. Typ. Max. Units

-

500 700 ns

-

150 200 ns

-

25

35 mJ

-

400 550 ns

-

80 110 ns

-

20

30 mJ

-

13

20 µC

Test Conditions

IC = 200A

VGE = ±15V

V = 600V

CE

RG(ON) = RG(OFF) = 4.7Ω

L ~ 100nH

IF = 200A, VR = 50% VCES,

dIF/dt = 2000A/µs

Min. Typ. Max. Units

-

600 800 ns

-

200 250 ns

-

40

50 mJ

-

500 650 ns

-

110 150 ns

-

40

55 mJ

-

35

45 µC

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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