GP200MHS12 查看數據表（PDF） - Dynex Semiconductor
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GP200MHS12 Datasheet PDF : 10 Pages
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GP200MHS12
TYPICAL CHARACTERISTICS
400
Common emitter
350 Tcase = 25˚C
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
Tcase = 125˚C
350
Vge = 20/15/12/10V
300
250
200
150
100
50
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
60
Tj = 125˚C
VGE = ±15V
A
50 VCE = 600V
B
40
C
30
20
10
A: Rg = 10Ω
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
50
Tj = 125˚C
45 VGE = ±15V
A
VCE = 600V
40
B
C
35
30
25
20
15
10
A: Rg = 10Ω
5
B: Rg = 6.2Ω
C: Rg = 4.7Ω
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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