NTE256 查看數據表（PDF） - NTE Electronics

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NTE256

Silicon NPN Transistor Darlington w/Damper Diode

NTE Electronics 

NTE256

Silicon NPN Transistor

Darlington w/Damper Diode

Description:

The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an

integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

stage in high power, fast switching applications.

Absolute Maximum Ratings:

Collector–Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A

Peak (tp = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 175°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

ICEO

ICEV

VCEO = 400V, IB = 0

VCE = 600V, VBE = 1.5V, Note 1

VCE = 600V, VBE = 1.5V, TC = +100°C,

Note 1

Emitter Cutoff Current

Collector–Emitter Sustaining Voltage

Collector–Emitter Saturation Voltage

IEBO

VCEO(sus)

VCE(sat)

VEB = 2V, IC = 0, Note 1

IC = 100mA, Note 1

IC = 10A, IB = 0.5A

IC = 18A, IB = 1.8A

IC = 22A, IB = 2.2A

IC = 28A, IB = 5.6A

Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.

Min Typ Max Unit

–

–

1 mA

–

– 100 µA

–

–

2 mA

–

– 175 mA

400 –

–

V

–

– 2.0 V

–

– 2.5 V

–

– 3.0 V

–

– 5.0 V

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